Registering a CAGR of 9.7% over the forecast period, the market value of the High Voltage IGBT Module is expected to reach US$ 11,400 million in the year 2027.
The growing demand for electric vehicles, as well as the increased need for high voltage operating devices, has resulted in increased adoption of IGBTs in energy and power, automotive, consumer electronics, and industries. As a result of the high-speed switching rate and optimized power loss, the global IGBT market is expected to grow moderately in the near future. Current leakage at high temperatures, on the other hand, is impeding the market growth. Proactive government initiatives to establish High Voltage Direct Current (HVDC) and smart grids utilizing IGBT for power communication would provide the market with lucrative opportunities.
High-voltage direct current (HVDC) systems based on IGBT power modules have matured as a technology for bulk-power electricity transmission. In comparison to traditional thyristor-based transmission systems, they allow for more compact plant design and more flexible operation. DC transmission currents in cutting-edge HVDC systems exceed 2 kA.
The report aspects discussed the profile of the top manufacturers of the global High Voltage IGBT Module market. These aspects include the financial status of major companies, trending advancements, and the entire market scenario. Growth of the report has examined High Voltage IGBT Module Market production, demand and growth potential, geographic analysis, as well as current market developments in various regions and countries.
The global High Voltage IGBT Module includes the identification and analysis of the various market participants competing in the global market. Prominent competitors include Mitsubishi Electric, Vishay, Hitachi Power Semiconductor Device, Infineon, IXYS Corporation, STMicroelectronics, Cree, Littelfuse, Microchip, Fuji Electric and others.
Fronius International GmbH and Infineon Technologies AG have issued a joint press release.
All-in-one solution with the highest efficiency class: Fronius's solar inverter employs CoolSiCTM MOSFETs.
November 2020--Fronius International GmbH and Infineon Technologies will launch a solar inverter using IGBT and other products in November 2020 to offer all-in-one solution products. It offers solutions such as an energy storage system, a secure power supply, a connection for an external system, and electric car charging.
The market is segmented based on the type, applications, companies, and regions.
By Type, it is segmented into
By Application, it is segmented into
During the forecast period, Asia Pacific is expected to gain the largest market share and the highest CAGR. The presence of many electronic and semiconductor manufacturers in China, South Korea, and India is attributed to the fastest growth. China is expected to gain the largest revenue share because it is the world leader in electric vehicle manufacturing. The increasing use of electric vehicles is propelling the country's market growth. Japan and India are also seeing an increase in demand for energy-saving resources as technology advances.
The High Voltage IGBT Module Market describes the factors driving the global growth opportunities in upcoming years and highlights market channels. In addition, the report analyzes market size and share, trends, by geographic region, end-use type, and segment. It focuses extensively on revealing a detailed regional analysis. The Global High Voltage IGBT Module Market report also conducted a PESTEL analysis of the industry to study the main influencing factors and entry barriers of the industry.
Scope of the Report covers High Voltage IGBT Module Market with a detailed analysis of the overall scenario for the market. It also highlights the business participants’ environment in the global marketplace. This report also provides an overview of leading companies covering the latest successful marketing strategies, market contributions, current and historical background, and latest market happenings to help key organizations to grow and generate larger profits. Business players will greatly benefit from this High Voltage IGBT Module Market analysis report as it has vital details to provide about regional markets and expected opportunities for the prediction time period 2022-2027. Growth between segments is used to understand the different growth factors that are expected to dominate the market as a whole and to develop strategies to differentiate between key applications and target markets. It further reveals how the worldwide market is working through efficient information graphics.
Report Attributes | Report Details |
Report Title | High Voltage IGBT Module Market - Global Growth, Trends and Forecast (2022 - 2027) By Types, By Application, By Regions, and By Key Players: Mitsubishi Electric, Vishay, Hitachi Power Semiconductor Device |
Forecast Period 2022 to 2027 CAGR | CAGR of 9.7% over the forecast period (2022-2027) |
By Type |
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By Application |
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By Companies | Mitsubishi Electric, Vishay, Hitachi Power Semiconductor Device, Infineon, IXYS Corporation, STMicroelectronics, Cree, Littelfuse, Microchip, Fuji Electric |
Regions Covered |
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Countries Covered |
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Base Year | 2022 |
Historical Year | 2017 to 2021 |
Forecast Year | 2022 to 2027 |
Number of Pages | 134 |
Customization Available | Yes, the report can be customized as per your needs |
What is the study period of this market?
The High Voltage IGBT Module Market is studied from 2017 - 2027.
What is the growth rate of the High Voltage IGBT Module Market?
The High Voltage IGBT Module Market is growing at a CAGR of 9.7% over the next 5 years.
Who are the key players in High Voltage IGBT Module Market?
Mitsubishi Electric, Vishay, Hitachi Power Semiconductor Device, Infineon, IXYS Corporation, STMicroelectronics, Cree, Littelfuse, Microchip, Fuji Electric
What regions does this High Voltage IGBT Module Market report cover?
North America (the United States, Canada, and Mexico)
Europe (Germany, France, UK, Russia, and Italy)
Asia-Pacific (China, Japan, Korea, India, and Southeast Asia)
South America (Brazil, Argentina, Colombia, etc.)
The Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria, and South Africa)
What are the significant types of High Voltage IGBT Module Market?
1000V-2000V, 2000V-3000V, 3000V-4000V, More than 4000V
What are the major end-use applications of High Voltage IGBT Module Market?
Automotive, Aircraft, UAVs, Industrial, Others
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SECONDARY RESEARCH
Secondary Research Information is collected from a number of publicly available as well as paid databases. Public sources involve publications by different associations and governments, annual reports and statements of companies, white papers and research publications by recognized industry experts and renowned academia etc. Paid data sources include third party authentic industry databases.
PRIMARY RESEARCH
Once data collection is done through secondary research, primary interviews are conducted with different stakeholders across the value chain like manufacturers, distributors, ingredient/input suppliers, end customers and other key opinion leaders of the industry. Primary research is used both to validate the data points obtained from secondary research and to fill in the data gaps after secondary research.
MARKET ENGINEERING
The market engineering phase involves analyzing the data collected, market breakdown and forecasting. Macroeconomic indicators and bottom-up and top-down approaches are used to arrive at a complete set of data points that give way to valuable qualitative and quantitative insights. Each data point is verified by the process of data triangulation to validate the numbers and arrive at close estimates.
EXPERT VALIDATION
The market engineered data is verified and validated by a number of experts, both in-house and external.
REPORT WRITING/ PRESENTATION
After the data is curated by the mentioned highly sophisticated process, the analysts begin to write the report. Garnering insights from data and forecasts, insights are drawn to visualize the entire ecosystem in a single report.
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